Australia: Transforming Technology with Metal Oxides

In a study published in the prestigious ACS Nano journal, researchers from Flinders University and UNSW Sydney have unveiled a cutting-edge advancement with profound implications for the technology sector. Their research introduces an entirely new class of silicon-compatible metal oxides, characterised by their straightforward wurtzite crystal structures.

Notably, the study marks the first-ever observation of nanoscale intrinsic ferroelectricity in thin films of magnesium-substituted zinc oxide. This discovery has the potential to revolutionise various technology domains, spanning from high-density data storage to low-energy electronics, flexible energy harvesting, and even wearable devices.

At the core of this technological breakthrough lies the concept of ferroelectricity, a property akin to magnets. Ferroelectrics possess a unique characteristic known as permanent electric polarisation, stemming from electric dipoles featuring opposite charged ends or poles.

This property is central to their utility, as it allows these materials to have their polarisation repeatedly altered between multiple equivalent states or directions when subjected to an external electric field. This “switchable” nature of polar materials opens up a world of possibilities for numerous technological applications. Notably, it could lead to the development of fast nano-electronic computer memory and low-energy electronic devices.

Lead author Haoze Zhang from UNSW, Sydney, points out the historical challenge in harnessing this technologically significant property. Traditionally, it was found in complex perovskite oxides, which incorporate a wide range of transition metal cations.

However, integrating these complex oxides into semiconductor manufacturing processes proved to be a formidable obstacle due to stringent processing requirements, such as precise control of multiple constituent elements and thermal budget considerations. This new study, therefore, presents a potential solution to this long-standing technological hurdle.

Co-author UNSW Sydney Professor Jan Seidel emphasised the real and critical implications of this material system for new technology and translational research. By unlocking the potential of these simpler silicon-compatible metal oxides, this research has set the stage for transformative developments in advanced devices. It not only offers crucial insights into the switchable polarisation of these materials but also establishes a solid foundation for their practical application in emerging technologies.

Corresponding and last author Dr. Pankaj Sharma, a Lecturer at Flinders University, underscores the significance of these findings, stating that they provide a pathway to the development of advanced devices. This breakthrough has the potential to reshape the technological landscape by addressing long-standing challenges and offering a new class of materials that are not only compatible with silicon but also amenable to integration into a wide array of cutting-edge devices and systems. In summary, this research represents a pivotal step forward in technology and promises to revolutionise diverse industries by paving the way for the creation of more efficient, versatile, and powerful devices.

OpenGov Asia reported earlier that with the backing of the Innovation, Technology, and Industry Bureau and the Office for Attracting Strategic Enterprises (OASES), the Hong Kong Science and Technology Parks Corporation (HKSTP) signed a Memorandum of Understanding (MoU) with a microelectronics company based in mainland China.

The partnership aims to establish a global Research and Development (R&D) Center focused on third-generation semiconductors at the Hong Kong Science Park and to set up Hong Kong’s first Silicon Carbide (SiC) 8-inch advanced wafer fab. This landmark initiative represents a crucial step in the Hong Kong Special Administrative Region (HKSAR) Government’s vision of becoming a leading microelectronics hub in the region.

While the Australian study on silicon-compatible metal oxides is distinct from the development in Hong Kong, both cases underscore the global trend of technological innovation and its impact on various regions. These examples illustrate how different regions, such as Hong Kong and Australia, are actively contributing to the ever-evolving landscape of technology and scientific progress. Together, they demonstrate the global significance of research, development, and international collaboration in the pursuit of technological excellence.